Datasheets - MOSFET-Einzeltransistoren Infineon
Unterabschnitt: "MOSFET-Einzeltransistoren"
Hersteller: "Infineon"
Hersteller
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSerie
AUIRF7309Q AUIRFR8401 AUIRFR8403 AUIRFR8405 AUIRL7732S2TR AUIRLR014N BSC016N04LS G BSC034N06NS BSC0504NSI BSC067N06LS3 G BSC070N10NS5 BSC093N04LS G BSP322P BSS89 F3L11MR12W2M1_B65 IGLD60R190D1 IGT40R070D1 E8220 IPB230N06L3 G IPD100N04S4-02 IPD100N06S4-03 IPD70N03S4L-04 IPD70N04S3-07 IPD90N03S4L-02 IPD90N03S4L-03 IPD90N04S3-04 IPD90N04S3-H4 IPD90N04S4-02 IPD90N04S4-03 IPD90N04S4-04 IPD90N04S4L-04 IPP230N06L3 G IQE013N04LM6 IQE013N04LM6CG IRF1405 IRF150 IRF3205 IRF4905 IRF4905S IRF5210S IRF5305S IRF6215S IRF6218S IRF6665 IRF6775M IRF7341 IRF7342 IRF7389 IRF7425 IRF7601 IRF7832TRPBF IRF8301M IRF8302M IRF8304M IRF8306M IRF8308M IRF9383M IRF9394M IRF9395M IRF9520NS IRF9530N IRF9530NS IRF9540N IRF9540NS IRF9Z24NS IRF9Z34NS IRFB3306 IRFP3703 IRFS3306 IRFZ34N IRFZ44N IRL3705N IRL520N IRLB8721 IRLB8743 IRLHM620 IRLML2803 IRLML2803TRPBF-1 IRLML6402 IRLR024N IRLR3103 IRLR3103PBF IRLR8743 IRLU024N IRLU3103 IRLU3103PBF IRLU8743 IRLZ24N IRLZ24NS SPB08P06P G SPB18P06P G SPB80P06P G SPD50P03L GSuchergebnisse: 684 Ausgabe: 1-20
Aussicht: Aufführen / Bilder
100-V-Einzel-N-Kanal-Leistungs-MOSFET in einem TO-220-Gehäuse Die IR-MOSFET-Familie der Leistungs-MOSFETs nutzt bewährte Siliziumprozesse und bietet Entwicklern ein breites Portfolio an Geräten zur Unterstützung verschiedener Anwendungen wie ...- 30V Single N-Channel Power MOSFET in a I-Pak package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The ...
- 30 V einkanaliger N-Kanal-HEXFET-LeistungsmOSFET in einem D-Pak-Gehäuse
- 30V Logic Level Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring ...
- Alle Small Signal n-Kanal-Produkte sind für Automobilanwendungen geeignet (ausgenommen 2N7002).
30V Dual N- und P-Kanal HEXFET Power MOSFET in einem SO-8 Gehäuse- -20 V Ein-P-Kanal-HEXFET-Leistungs-MOSFET in einem SO-8-Gehäuse
Ein 40-V-Ein-N-Kanal-HEXFET-Leistungs-MOSFET in Automobilqualität in einem DirectFET-SC-Gehäuse mit einer Nennleistung von 58 Ampere und geringem Widerstand
150V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance ...
100V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ SH package for Audio The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring ...
55-V-Einkanal-HEXFET-Leistungs-MOSFET in einem TO-220AB-Gehäuse
OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on) The IQE013N04LM6CG extends the innovative Source-Down family with the 1.35mOhm, OptiMOS™ power MOSFET 40V in a 3.3x3.3 PQFN ...
OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down package with industry leading R DS(on) Infineon has extended its innovative Source-Down family with the IQE013N04LM6 1.35mOhm, 40V in a 3.3x3.3 PQFN package. This best-in-class power ...
Automotive Q101 55V Ein-N-Kanal-HEXFET-Leistungs-MOSFET in einem D-Pak-Paket
55V Ein-N-Kanal-HEXFET-Leistungs-MOSFET in einem I-Pak-Gehäuse- 55-V-Einkanal-HEXFET-Leistungs-MOSFET in einem D-Pak-Gehäuse
- 30-V-Einkanal-HEXFET-Leistungs-MOSFET in einem TO-220AB-Gehäuse
- 55-V-Einkanal-HEXFET-Leistungs-MOSFET in einem TO-220AB-Gehäuse
20-V-Ein-N-Kanal-HEXFET-Leistungs-MOSFET in einem PQFN 3.3 x 3.3-Gehäuse
MOSFET N-Ch 60 V 30 A TO220-3
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