Datasheet Infineon AUIRLR014N — Datenblatt

AUTOMOTIVE GRADE AUIRLR014N  
Features Advanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET
  D-Pak max. 0.14
10A ID
D G S D-Pak
AUIRLR014N G
Gate D
Drain Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000 Package Type AUIRLR014N 55V RDS(on) Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
Base part number VDSS S …