Datasheets

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  1. Datasheet ON Semiconductor TIP30G
    1.0 A, 40 V PNP Power Bipolar Junction Transistor in TO-220-3 package The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C ...
  2. 1.0 A, 40 V PNP Power Bipolar Junction Transistor in TO-220-3 package The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C ...
  1. Datasheet ON Semiconductor TIP29G
    1.0 A, 40 V NPN Power Bipolar Junction Transistor in TO-220-3 package The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C ...
  2. 1.0 A, 40 V NPN Power Bipolar Junction Transistor in TO-220-3 package The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C ...
  3. Datasheet ON Semiconductor TIP29BG
    1.0 A, 80 V NPN Power Bipolar Junction Transistor in TO-220-3 package The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C ...
  4. 1.0 A, 80 V NPN Power Bipolar Junction Transistor in TO-220-3 package The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C ...
  5. Datasheet ON Semiconductor TIP29AG
    1.0 A, 60 V NPN Power Bipolar Junction Transistor in TO-220-3 package The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C ...
  6. 1.0 A, 60 V NPN Power Bipolar Junction Transistor in TO-220-3 package The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C ...
  7. Datasheet ON Semiconductor TIP29CG
    1.0 A, 100 V NPN Power Bipolar Junction Transistor in TO-220-3 package The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C ...
  8. 1.0 A, 100 V NPN Power Bipolar Junction Transistor in TO-220-3 package The 1.0 A, 100 V NPN Power Bipolar Junction Transistor is designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. The TIP29, A, B, C ...
  9. Datasheet NEC 2SD882
    NPN Silicon Power Transistor in TO-126 package The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.
  10. 6 Inverter Circuits The UTC CD4069 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall ...
  11. 6 Inverter Circuits The UTC CD4069 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall ...
  12. 6 Inverter Circuits The UTC CD4069 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall ...
  13. 6 Inverter Circuits The UTC CD4069 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall ...
  14. 6 Inverter Circuits The UTC CD4069 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall ...
  15. 6 Inverter Circuits The UTC CD4069 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall ...
  16. 6 Inverter Circuits The UTC CD4069 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall ...
  17. Datasheet Bourns PEC11R-4220F-S0024
    12 mm Incremental Encoder
  18. Datasheet Bourns PEC11R-4015F-S0024
    12 mm Incremental Encoder