Datasheet PMV30UN (Nexperia) - 2
| Hersteller | Nexperia |
| Beschreibung | N-channel TrenchMOS ultra low level FET in SOT23 package |
| Seiten / Seite | 12 / 2 — Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. Limiting … |
| Dateiformat / Größe | PDF / 244 Kb |
| Dokumentensprache | Englisch |
Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. Limiting values. Table 2:. Symbol Parameter. Conditions. Min. Max. Unit
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Philips Semiconductors PMV30UN
µ
TrenchMOS™ ultra low level FET 3. Limiting values Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V ≤ DS drain-source voltage (DC) 25 °C ≤ Tj 150 °C - 20 V V ≤ DGR drain-gate voltage (DC) 25 °C ≤ Tj 150 °C; RGS = 20 kΩ - 20 V VGS gate-source voltage (DC) - ±8 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 - 5.7 A Tsp = 100 °C; VGS = 4.5 V; Figure 2 - 3.65 A I ≤ DM peak drain current Tsp = 25 °C; pulsed; tp 10 µs; Figure 3 - 23.1 A Ptot total power dissipation Tsp = 25 °C; Figure 1 - 1.9 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C - 1.6 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 6.4 A 9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 2 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks
Philips Semiconductors PMV30UN
µ
TrenchMOS™ ultra low level FET 3. Limiting values Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V ≤ DS drain-source voltage (DC) 25 °C ≤ Tj 150 °C - 20 V V ≤ DGR drain-gate voltage (DC) 25 °C ≤ Tj 150 °C; RGS = 20 kΩ - 20 V VGS gate-source voltage (DC) - ±8 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 - 5.7 A Tsp = 100 °C; VGS = 4.5 V; Figure 2 - 3.65 A I ≤ DM peak drain current Tsp = 25 °C; pulsed; tp 10 µs; Figure 3 - 23.1 A Ptot total power dissipation Tsp = 25 °C; Figure 1 - 1.9 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C - 1.6 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 6.4 A 9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 2 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks