Datasheet JX3S0070R170M (JX Semiconductor) - 6

JX3S0070R1700M 1700V, N.Channel, Silicon Carbide MOSFET Typical Performance
-14 -12 -10 -8 -6 -4 -2 0 100 0 80 -20 VGS =0V VGS=8V 60 -40 VGS=18V 40 VGS=20V -60 20 0 -80 0 200 400 600 800 1000 1200
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Figure 9 Figure 10
3rd Quadrant Characteristic at 25°C Output Capacitor Stored Energy 10000 250
C ISS
1000 200
C
100
OSS
150 10 100
C RSS
1 50 0.1 0 0 200 400 600 800 1000 0 25 50 75 100 125 150 175
Drain-Source Voltage, V Case Temperature, T DS (V) C ( ° C) Figure 11 Figure 12
Capacitances vs. Drain-Source Max Power Dissipation Derating vs TC
Product Data Sheet
6
JXC.3T04.40AA/2
Document Outline JX3S0070R170M Thermal Characteristics Typical Performance Figure 1 Figure 3 Normalized On-Resistance vs. Temperature Figure 2 Figure 4 Typical Performance Figure 5 Figure 6 Body Diode Characteristic at 25°C Figure 7 Figure 8 Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Figure 15 Figure 16 Typical Performance Figure 17 Figure 18 Contact Info