Datasheet JX3S0070R170M (JX Semiconductor)

JX3S0070R170M
1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET
General Description
The JX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with reduced EMI.
Features
3rd Generation SiC MOSFET Technology High-Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Paral el and Simple to Drive RoHS Compliant, Halogen Free
Applications Ordering Informations Order Number
ASC40N1700MT3 EV Motor Drive High Voltage DC/DC Converters
Marking
ASC40N1700MT3 Switch Mode Power Supplies
Package Type
TO-247-3L Solar Inverters
Packing Method
Tube EV Charging
Key Parameters Symbol Parameter Values Unit Test Conditions Absolute maximum rating
VDS Drain-Source Voltage 1700 V TC=25°C ID Drain Current (Continuous) 40 A TC=25°C PD Power Dissipation 242 W TC=25OC TJ Junction Temperature 175 OC
Symbol Parameter Min. Typ. Max. Unit Test Conditions Static characteristics
- 72 88 VGS=18V; ID=20A; TJ=25°C RDS(on) Static Drain-Source on Resistance mΩ - 130 - VGS=18V; ID=20A; TJ=175°C
Dynamic characteristics
QG Total Gate Charge - 100 - nC VDS=1000V; VGS=-5/+18V; ID=25A; QGD Gate-Drain Charge TJ=25°C - 22 -
Source-drain diode
Qrr Reverse Recovery Charge - 360 - nC VGS=-5V; IF=20A; VR=1000V; di/dt=1000A/μs; TJ=175°C
Product Data Sheet
1
JXC-3T04-40AA/2
Document Outline JX3S0070R170M Thermal Characteristics Typical Performance Figure 1 Figure 3 Normalized On-Resistance vs. Temperature Figure 2 Figure 4 Typical Performance Figure 5 Figure 6 Body Diode Characteristic at 25°C Figure 7 Figure 8 Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Figure 15 Figure 16 Typical Performance Figure 17 Figure 18 Contact Info