Datasheet JX3S0070R170M (JX Semiconductor) - 5

JX3S0070R1700M 1700V, N.Channel, Silicon Carbide MOSFET Typical Performance
-10 -8 -6 -4 -2 0 0 80 TJ=17 5℃ VGS =-5V -10
) (A
60
S ID
T V J=25℃ GS =-3V -20
urrent, C
V 40 GS=0V TJ= -55℃
-Source
-30
rain D
20 -40 0 0 2 4 6 8 10 12 14 16 -50
Gate-Source Voltage, VGS (V) Drain-Source Voltage, VDS (V) Figure 5 Figure 6
Transfer Characteristic Body Diode Characteristic at 25°C 4 20 3.5 15 3
) (V ) S (V
2.5
VG
10
e, e,Vth
2
oltag ltag V o V
5
ld o
1.5
ate-Source Thresh
1
G
0 0.5 0 -5 -50 -25 0 25 50 75 100 125 150 175 0 30 60 90 120
Junction Temperature, TJ (°C) Gate Charge, QG (nC) Figure 7 Figure 8
Threshold Voltage vs. Temperature Gate Charge Characteristics
Product Data Sheet
5
JXC.3T04.40AA/2
Document Outline JX3S0070R170M Thermal Characteristics Typical Performance Figure 1 Figure 3 Normalized On-Resistance vs. Temperature Figure 2 Figure 4 Typical Performance Figure 5 Figure 6 Body Diode Characteristic at 25°C Figure 7 Figure 8 Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Figure 15 Figure 16 Typical Performance Figure 17 Figure 18 Contact Info