Datasheet PMV30UN (Nexperia) - 8

Philips Semiconductors PMV30UN
µ
TrenchMOS™ ultra low level FET
03am37 03am39 20 5 V V I I GS = 0 V GS D = 5 A S (V) (A) Tj = 25 °C 4 15 VDD = 10 V 3 10 2 Tj = 25 °C 150 °C 5 1 0 0 0 0.5 1 1.5 0 2 4 6 8 10 Q V G (nC) SD (V) Tj = 25 oC and 150 oC; VGS = 0 V ID = 5 A; VDD = 10 V
Fig 12. Source (diode forward) current as a function of Fig 13. Gate-source voltage as a function of gate source-drain (diode forward) voltage; typical charge; typical values. values.
9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 8 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks