Datasheet TPD7110F (Toshiba)

TPD7110F Toshiba Bi-CMOS Linear Integrated Circuits Silicon Monolithic
TPD7110F
High-Side N channel MOSFET Gate Driver
1. Description
TPD7110F is a single-output N-channel MOSFET gate driver. It incorporates a charge pump circuit, a reverse current blocking circuit from the load side, protection circuits against undervoltage and overvoltage of the power supply, and a reverse connection protection circuit. When combined with an external N-channel MOSFET, it can be used to configure an ideal diode or a back-to-back relay switch.
2. Applications
Power lines for automotive body control modules, BMS (Battery Management System), HUD (Head-Up Display), etc. SON8-P-0303-0.65 Weight : 0.017g (typ.)
3. Features
• Operating voltage range : 3 to 32 V • Reverse current blocking from the load side • Undervoltage/Overvoltage Protection for Power Supply • Reverse connection protection of the power supply up to -32V • Current consumption during output ON : 100 μA (typ.) • Current consumption during output OFF : 2 μA (typ.) • Meets AEC-Q100 standards • Small package : PS-8 • Operating temperature range : Tj = -40 to 125 °C Start of commercial production 2025-10 ©202 5 1 2025-09-04 Toshiba Electronic Devices & Storage Corporation Rev. 1.0