Datasheet ZVN4424A (Diodes) - 2
| Hersteller | Diodes |
| Beschreibung | 240V N-Channel Enhancement Mode Vertical DMOSFET in E-Line package |
| Seiten / Seite | 6 / 2 — ZVN4424A. Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal … |
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| Dokumentensprache | Englisch |
ZVN4424A. Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. Electrical Characteristics. Min. Typ. Max
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ZVN4424A Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 240 V Gate-Source Voltage VGSS ±40 V Continuous Drain Current ID 260 mA Pulsed Drain Current IDM 1.5 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 750 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 167 °C/W Thermal Resistance, Junction to Lead (Note 6) RθJL 71 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a through-hole device mounted on the minimum recommended pad layout with 12mm lead length from the bottom of package to the single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS 240 — V ID = 1mA, VGS = 0V V Zero Gate Voltage Drain Current I μ DS = 240V, VGS = 0V DSS 10 A 100 VDS = 190V, VGS = 0V, T = +125°C Gate-Source Leakage IGSS 100 nA VGS = ±40V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) 0.8 1.3 1.8 V ID = 1mA, VDS = VGS 4 5.5 V Static Drain-Source On-Resistance (Note 7) GS = 10V, ID = 500mA RDS(ON) Ω 4.3 VGS = 2.5V, ID = 500mA Forward Transconductance (Notes 7 & 9) gFS 0.4 0.75 S VDS = 10V, ID = 0.5A
DYNAMIC CHARACTERISTICS
(Note 9) Input Capacitance Ciss 110 200 V Output Capacitance Coss 15 25 pF DS = 25V, VGS = 0V f = 1.0MHz Reverse Transfer Capacitance Crss 3.5 15 Turn-On Delay Time (Note 8) tD(ON) 2.5 5 Turn-On Rise Time (Note 8) tR 5 8 V ns DD = 50V, VGEN = 10V Turn-Off Delay Time (Note 8) tD(OFF) 40 60 ID = 0.25A Turn-Off Fall Time (Note 8) tF 16 25 Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 8. Switching characteristics are independent of operating junction temperature. Switching times are measured with 50Ω source impedance and <5ns rise time on a pulse generator. 9. For design aid only, not subject to production testing. ZVN4424A 2 of 6 May 2016 Document Number: DS33377 Rev. 5 - 2
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(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 240 V Gate-Source Voltage VGSS ±40 V Continuous Drain Current ID 260 mA Pulsed Drain Current IDM 1.5 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 750 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 167 °C/W Thermal Resistance, Junction to Lead (Note 6) RθJL 71 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a through-hole device mounted on the minimum recommended pad layout with 12mm lead length from the bottom of package to the single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS 240 — V ID = 1mA, VGS = 0V V Zero Gate Voltage Drain Current I μ DS = 240V, VGS = 0V DSS 10 A 100 VDS = 190V, VGS = 0V, T = +125°C Gate-Source Leakage IGSS 100 nA VGS = ±40V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) 0.8 1.3 1.8 V ID = 1mA, VDS = VGS 4 5.5 V Static Drain-Source On-Resistance (Note 7) GS = 10V, ID = 500mA RDS(ON) Ω 4.3 VGS = 2.5V, ID = 500mA Forward Transconductance (Notes 7 & 9) gFS 0.4 0.75 S VDS = 10V, ID = 0.5A
DYNAMIC CHARACTERISTICS
(Note 9) Input Capacitance Ciss 110 200 V Output Capacitance Coss 15 25 pF DS = 25V, VGS = 0V f = 1.0MHz Reverse Transfer Capacitance Crss 3.5 15 Turn-On Delay Time (Note 8) tD(ON) 2.5 5 Turn-On Rise Time (Note 8) tR 5 8 V ns DD = 50V, VGEN = 10V Turn-Off Delay Time (Note 8) tD(OFF) 40 60 ID = 0.25A Turn-Off Fall Time (Note 8) tF 16 25 Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 8. Switching characteristics are independent of operating junction temperature. Switching times are measured with 50Ω source impedance and <5ns rise time on a pulse generator. 9. For design aid only, not subject to production testing. ZVN4424A 2 of 6 May 2016 Document Number: DS33377 Rev. 5 - 2
www.diodes.com
© Diodes Incorporated