Datasheet IRGPS60B120KDP (Infineon) - 9

HerstellerInfineon
BeschreibungInsulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode in TO-274AA package
Seiten / Seite12 / 9 — Fig 24. Fig 25
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DokumentenspracheEnglisch

Fig 24. Fig 25

Fig 24 Fig 25

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IRGPS60B120KDP 10 ) CJht 1 Z ( es D = 0.50 n o p s 0.20 e R l 0.10 a 0.1 mr 0.05 e h 0.01 T Notes: 0.02 SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec)
Fig 24.
Normalized Transient Thermal Impedance, Junction-to-Case (IGBT) 10 ) CJht 1 Z ( e D = 0.50 s n o p s 0.20 e R l 0.10 a 0.1 mre 0.05 h T 0.01 Notes: 0.02 SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec)
Fig 25.
Normalized Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9