Datasheet IRGPS60B120KDP (Infineon)
| Hersteller | Infineon |
| Beschreibung | Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode in TO-274AA package |
| Seiten / Seite | 12 / 1 — Features. Benefits. Super. 247™. Absolute Maximum Ratings. Parameter. … |
| Dateiformat / Größe | PDF / 142 Kb |
| Dokumentensprache | Englisch |
Features. Benefits. Super. 247™. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Min. Typ
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PD- 95913 IRGPS60B120KDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT
Features
C VCES = 1200V • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. VCE(on) typ. = 2.50V • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. G @ VGE = 15V, • Positive VCE (on) Temperature Coefficient. • Super-247 Package. E • Lead-Free I N-channel CE = 60A, Tj=25°C
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation.
Super
-
247™ Absolute Maximum Ratings Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 105 IC @ TC = 100°C Continuous Collector Current 60 ICM Pulsed Collector Current 240 A ILM Clamped Inductive Load Current 240 IF @ TC = 25°C Diode Continuous Forward Current 120 IF @ TC = 100°C Diode Continuous Forward Current 60 IFM Diode Maximum Forward Current 240 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 595 W PD @ TC = 100°C Maximum Power Dissipation 238 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.20 RθJC Junction-to-Case - Diode ––– ––– 0.41 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 40 Recommended Clip Force 20 (2) ––– ––– N(kgf) Wt Weight ––– 6.0 (0.21) ––– g (oz) Le Internal Emitter Inductance (5mm from package) ––– 13 ––– nH www.irf.com 1 9/22/04
Features
C VCES = 1200V • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. VCE(on) typ. = 2.50V • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. G @ VGE = 15V, • Positive VCE (on) Temperature Coefficient. • Super-247 Package. E • Lead-Free I N-channel CE = 60A, Tj=25°C
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation.
Super
-
247™ Absolute Maximum Ratings Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 105 IC @ TC = 100°C Continuous Collector Current 60 ICM Pulsed Collector Current 240 A ILM Clamped Inductive Load Current 240 IF @ TC = 25°C Diode Continuous Forward Current 120 IF @ TC = 100°C Diode Continuous Forward Current 60 IFM Diode Maximum Forward Current 240 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 595 W PD @ TC = 100°C Maximum Power Dissipation 238 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.20 RθJC Junction-to-Case - Diode ––– ––– 0.41 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 40 Recommended Clip Force 20 (2) ––– ––– N(kgf) Wt Weight ––– 6.0 (0.21) ––– g (oz) Le Internal Emitter Inductance (5mm from package) ––– 13 ––– nH www.irf.com 1 9/22/04