Datasheet IRGPS60B120KDP (Infineon) - 3
| Hersteller | Infineon |
| Beschreibung | Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode in TO-274AA package |
| Seiten / Seite | 12 / 3 — Fig. 1. Fig. 2. Fig. 3. Fig. 4 |
| Dateiformat / Größe | PDF / 142 Kb |
| Dokumentensprache | Englisch |
Fig. 1. Fig. 2. Fig. 3. Fig. 4
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRGPS60B120KDP 140 700 LIMITED BY PACKAGE 120 600 100 500 ) 80 ) 400 A W ( t I C o 60 t 300 P 40 200 20 100 0 0 0 20 40 60 80 100 120 140 160 0 50 100 150 200 TC (°C) TC (°C)
Fig. 1
- Maximum DC Collector Current vs.
Fig. 2
- Power Dissipation vs. Case Case Temperature Temperature 1000 1000 100 2 µs 10 µs 100 ) A( ) 10 100 µs A I C I C DC 1ms 10 1 10ms 0.1 1 10 100 1000 10000 1 10 100 1000 10000 VCE (V) VCE (V)
Fig. 3
- Forward SOA
Fig. 4
- Reverse Bias SOA TC = 25°C; TJS ≤ 150°C TJ = 150°C; VGE =15V www.irf.com 3
Fig. 1
- Maximum DC Collector Current vs.
Fig. 2
- Power Dissipation vs. Case Case Temperature Temperature 1000 1000 100 2 µs 10 µs 100 ) A( ) 10 100 µs A I C I C DC 1ms 10 1 10ms 0.1 1 10 100 1000 10000 1 10 100 1000 10000 VCE (V) VCE (V)
Fig. 3
- Forward SOA
Fig. 4
- Reverse Bias SOA TC = 25°C; TJS ≤ 150°C TJ = 150°C; VGE =15V www.irf.com 3