Datasheet BAT81 (NXP) - 3
| Hersteller | NXP |
| Beschreibung | Schottky barrier diodes |
| Seiten / Seite | 5 / 3 — ELECTRICAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. MAX. UNIT. … |
| Dateiformat / Größe | PDF / 28 Kb |
| Dokumentensprache | Englisch |
ELECTRICAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. MAX. UNIT. THERMAL CHARACTERISTICS. VALUE. Note
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Philips Semiconductors Product specification Schottky barrier diodes BAT81; BAT82; BAT83
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VF forward voltage see Fig.2 IF = 0.1 mA 330 mV IF = 1 mA 410 mV IF = 15 mA 1 V IR reverse current VR = VRmax; see Fig.3 200 nA Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.4 1.6 pF
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 320 K/W
Note
1. Refer to SOD68 standard mounting conditions. 1996 Mar 20 3
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VF forward voltage see Fig.2 IF = 0.1 mA 330 mV IF = 1 mA 410 mV IF = 15 mA 1 V IR reverse current VR = VRmax; see Fig.3 200 nA Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.4 1.6 pF
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 320 K/W
Note
1. Refer to SOD68 standard mounting conditions. 1996 Mar 20 3