Datasheet BAT81 (NXP) - 4
| Hersteller | NXP |
| Beschreibung | Schottky barrier diodes |
| Seiten / Seite | 5 / 4 — GRAPHICAL DATA |
| Dateiformat / Größe | PDF / 28 Kb |
| Dokumentensprache | Englisch |
GRAPHICAL DATA
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Philips Semiconductors Product specification Schottky barrier diodes BAT81; BAT82; BAT83
GRAPHICAL DATA
MGC690 MGC689 10 2 10 4 handbook, halfpage handbook, halfpage I (1) R (nA) IF 10 3 (mA) (1) (2) (3) 10 10 2 (2) 10 1 1 (3) 10−1 (1) (2) (3) 10 −1 10−2 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 V (V) V (V) R F (1) Tamb = 85 °C. (1) Tamb = 85 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. (3) Tamb = −40 °C. Fig.2 Forward current as a function of forward Fig.3 Reverse current as a function of reverse voltage; typical values. voltage; typical values. MGC688 2.0 Cd (pF) 1.5 1.0 0.5 0 0 15 30 45 60 V (V) R f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 20 4
GRAPHICAL DATA
MGC690 MGC689 10 2 10 4 handbook, halfpage handbook, halfpage I (1) R (nA) IF 10 3 (mA) (1) (2) (3) 10 10 2 (2) 10 1 1 (3) 10−1 (1) (2) (3) 10 −1 10−2 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 V (V) V (V) R F (1) Tamb = 85 °C. (1) Tamb = 85 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. (3) Tamb = −40 °C. Fig.2 Forward current as a function of forward Fig.3 Reverse current as a function of reverse voltage; typical values. voltage; typical values. MGC688 2.0 Cd (pF) 1.5 1.0 0.5 0 0 15 30 45 60 V (V) R f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 20 4