Datasheet BAT81 (NXP) - 2
| Hersteller | NXP |
| Beschreibung | Schottky barrier diodes |
| Seiten / Seite | 5 / 2 — Philips Semiconductors. Product specification. Schottky barrier diodes. … |
| Dateiformat / Größe | PDF / 28 Kb |
| Dokumentensprache | Englisch |
Philips Semiconductors. Product specification. Schottky barrier diodes. BAT81; BAT82; BAT83. FEATURES. DESCRIPTION. APPLICATIONS
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Philips Semiconductors Product specification Schottky barrier diodes BAT81; BAT82; BAT83 FEATURES DESCRIPTION
• Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static • High breakdown voltage discharges, encapsulated in a hermetically-sealed subminiature SOD68 • (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance. handbook, halfpage k a
APPLICATIONS
MAM193 • Ultra high-speed switching • Voltage clamping • Protection circuits Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol. • Blocking diodes.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VR continuous reverse voltage BAT81 − 40 V BAT82 − 50 V BAT83 − 60 V IF continuous forward current − 30 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 150 mA IFSM non-repetitive peak forward current tp ≤ 10 ms − 500 mA Tstg storage temperature −65 150 °C Tj junction temperature − 125 °C 1996 Mar 20 2
• Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static • High breakdown voltage discharges, encapsulated in a hermetically-sealed subminiature SOD68 • (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance. handbook, halfpage k a
APPLICATIONS
MAM193 • Ultra high-speed switching • Voltage clamping • Protection circuits Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol. • Blocking diodes.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VR continuous reverse voltage BAT81 − 40 V BAT82 − 50 V BAT83 − 60 V IF continuous forward current − 30 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 150 mA IFSM non-repetitive peak forward current tp ≤ 10 ms − 500 mA Tstg storage temperature −65 150 °C Tj junction temperature − 125 °C 1996 Mar 20 2