Datasheet BIDW30N60T (Bourns) - 9

HerstellerBourns
BeschreibungInsulated Gate Bipolar Transistor (IGBT)
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BIDW30N60T Insulated Gate Bipolar Transistor (IGBT). Product Dimensions. Symbol. Min. Nom. Max. Packaging Specifications

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) Product Dimensions Symbol Min Nom Max Packaging Specifications

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BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) Product Dimensions
E A
Symbol Min. Nom. Max.
P DIA. Q A2 A 4.80 5.00 5.20 (.189) (.197) (.205) A1 2.21 2.41 2.59 (.087) (.095) (.102) E2 D A2 1.85 2.00 2.15 (.073) (.079) (.085) b 1.11 (.044) — 1.36 (.054) L1 b2 1.91 (.075) — 2.25 (.089) L b4 2.91 (.115) — 3.25 (.128) c 0.51 b2 b c A1 (.020) — 0.75 (.030) b4 e D 20.80 21.00 21.30 (.819) (.827) (.839) MM DIMENSIONS: 15.80 16.10 (INCHES) E 15.50 (.610) (.622) (.634) E2 4.40 5.00 5.20 (.173) (.197) (.205)
Packaging Specifications
BIDW30N60T ... 30 pieces per tube e 5.44 BSC (.214) L 19.72 19.92 20.22 (.776) (.784) (.796) L1 — — 4.30 (.169) P 3.40 (.134) — 3.80 (.150) Q 5.60 5.80 6.00 (.220) (.228) (.236)
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REV. 07/22 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.