Datasheet BIDW30N60T (Bourns)
| Hersteller | Bourns |
| Beschreibung | Insulated Gate Bipolar Transistor (IGBT) |
| Seiten / Seite | 10 / 1 — Features. Applications. BIDW30N60T Insulated Gate Bipolar Transistor … |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
Features. Applications. BIDW30N60T Insulated Gate Bipolar Transistor (IGBT). General Information. Additional Information
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Features Applications
n 600 V, 30 A, Low Collector-Emitter n Switch-Mode Power Supplies (SMPS) Saturation Voltage (VCE(sat)) n Uninterruptible Power Sources (UPS) n Novel trench-gate field-stop technology n Power Factor Correction (PFC) n Optimized for conduction n Induction heating n RoHS compliant*
BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) General Information Additional Information
The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate Click these links for more information: and a bipolar transistor, resulting in an optimum component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of dynamic characteristics while resulting in a lower Collector- Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT structure gives a lower thermal resistance R SELECTOR LIBRARY (th).
Maximum Electrical Ratings (TC = 25 °C, unless otherwise specified) Parameter Symbol Value Unit
Collector-Emitter Voltage VCES 600 V Continuous Collector Current (TC = 25 °C), limited by Tjmax IC 60 A Continuous Collector Current (TC = 100 °C), limited by Tjmax IC 30 A Pulsed Collector Current, tp limited by Tjmax ICP 90 A Gate-Emitter Voltage VGE ±20 V Continuous Forward Current (TC = 25 °C), limited by Tjmax IF 60 A Continuous Forward Current (TC = 100 °C), limited by Tjmax IF 30 A Short-circuit Withstand Time (VCE = 300 V, VGE = 15 V) TSC 10 µs Total Power Dissipation Ptotal 230 W Storage Temperature TSTG -55 to +150 °C Operating Junction Temperature Tj -55 to +150 °C
Thermal Resistance Parameter Symbol Max Unit
IGBT Thermal Resistance Junction - Case Rth(j-c)_IGBT 0.54 °C/W Diode Thermal Resistance Junction - Case Rth(j-c)_Diode 1.2 °C/W
Typical Part Marking Internal Circuit
2 1 – GATE 2 – COLLECTOR MFR’S W30N60T DEVICE CODE *1 3 – EMITTER TRADEMARK YYYYYYY 1 LOT ID: *1 – BUILT-IN FRD 1ST CHARACTER INDICATES PRODUCTION LINE 2ND CHARACTER INDICATES GRADE 3RD CHARACTER INDICATES YEAR OF MANUFACTURE BACK SIDE TAB 4TH CHARACTER INDICATES MONTH OF MANUFACTURE – COLLECTOR 3 5TH, 6TH & 7TH CHARACTERS INDICATE SERIAL NO. (7TH CHARACTER COULD BE OMITTED) 1 2 3 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice.
WARNING Cancer and
Users should verify actual device performance in their specific applications.
Reproductive Harm
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, www.P65Warnings.ca.gov and at www.bourns.com/docs/legal/disclaimer.pdf.
n 600 V, 30 A, Low Collector-Emitter n Switch-Mode Power Supplies (SMPS) Saturation Voltage (VCE(sat)) n Uninterruptible Power Sources (UPS) n Novel trench-gate field-stop technology n Power Factor Correction (PFC) n Optimized for conduction n Induction heating n RoHS compliant*
BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) General Information Additional Information
The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate Click these links for more information: and a bipolar transistor, resulting in an optimum component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of dynamic characteristics while resulting in a lower Collector- Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT structure gives a lower thermal resistance R SELECTOR LIBRARY (th).
Maximum Electrical Ratings (TC = 25 °C, unless otherwise specified) Parameter Symbol Value Unit
Collector-Emitter Voltage VCES 600 V Continuous Collector Current (TC = 25 °C), limited by Tjmax IC 60 A Continuous Collector Current (TC = 100 °C), limited by Tjmax IC 30 A Pulsed Collector Current, tp limited by Tjmax ICP 90 A Gate-Emitter Voltage VGE ±20 V Continuous Forward Current (TC = 25 °C), limited by Tjmax IF 60 A Continuous Forward Current (TC = 100 °C), limited by Tjmax IF 30 A Short-circuit Withstand Time (VCE = 300 V, VGE = 15 V) TSC 10 µs Total Power Dissipation Ptotal 230 W Storage Temperature TSTG -55 to +150 °C Operating Junction Temperature Tj -55 to +150 °C
Thermal Resistance Parameter Symbol Max Unit
IGBT Thermal Resistance Junction - Case Rth(j-c)_IGBT 0.54 °C/W Diode Thermal Resistance Junction - Case Rth(j-c)_Diode 1.2 °C/W
Typical Part Marking Internal Circuit
2 1 – GATE 2 – COLLECTOR MFR’S W30N60T DEVICE CODE *1 3 – EMITTER TRADEMARK YYYYYYY 1 LOT ID: *1 – BUILT-IN FRD 1ST CHARACTER INDICATES PRODUCTION LINE 2ND CHARACTER INDICATES GRADE 3RD CHARACTER INDICATES YEAR OF MANUFACTURE BACK SIDE TAB 4TH CHARACTER INDICATES MONTH OF MANUFACTURE – COLLECTOR 3 5TH, 6TH & 7TH CHARACTERS INDICATE SERIAL NO. (7TH CHARACTER COULD BE OMITTED) 1 2 3 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice.
WARNING Cancer and
Users should verify actual device performance in their specific applications.
Reproductive Harm
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, www.P65Warnings.ca.gov and at www.bourns.com/docs/legal/disclaimer.pdf.