Datasheet IRFP9140 (Vishay) - 5
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 11 / 5 — IRFP9140. Fig. 10 - Switching Time Test Circuit. Fig. 9 - Maximum Drain … |
| Dateiformat / Größe | PDF / 1.0 Mb |
| Dokumentensprache | Englisch |
IRFP9140. Fig. 10 - Switching Time Test Circuit. Fig. 9 - Maximum Drain Current vs. Case Temperature
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IRFP9140
www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. RG -+VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10 - Switching Time Test Circuit
t t t t d(on) r d(off) f VGS 10 % 90 % VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 11 - Switching Time Waveforms Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S22-0058-Rev. C, 31-Jan-2022
5
Document Number: 91238 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. RG -+VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10 - Switching Time Test Circuit
t t t t d(on) r d(off) f VGS 10 % 90 % VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 11 - Switching Time Waveforms Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S22-0058-Rev. C, 31-Jan-2022
5
Document Number: 91238 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000