Datasheet IRFP9140 (Vishay) - 6
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 11 / 6 — IRFP9140. Fig. 13 - Unclamped Inductive Test Circuit. Fig. 14 - Unclamped … |
| Dateiformat / Größe | PDF / 1.0 Mb |
| Dokumentensprache | Englisch |
IRFP9140. Fig. 13 - Unclamped Inductive Test Circuit. Fig. 14 - Unclamped Inductive Waveforms
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IRFP9140
www.vishay.com Vishay Siliconix L I V AS DS Vary tp to obtain required IAS VDS R D.U.T G -+ VDD I V AS DD - 10 V tp t 0.01 p Ω VDS
Fig. 13 - Unclamped Inductive Test Circuit Fig. 14 - Unclamped Inductive Waveforms Fig. 15 - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF Q Q - GS GD + V D.U.T. DS VG VGS - 3 mA Charge I I G D Current sampling resistors
Fig. 16 - Basic Gate Charge Waveform Fig. 17 - Gate Charge Test Circuit
S22-0058-Rev. C, 31-Jan-2022
6
Document Number: 91238 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix L I V AS DS Vary tp to obtain required IAS VDS R D.U.T G -+ VDD I V AS DD - 10 V tp t 0.01 p Ω VDS
Fig. 13 - Unclamped Inductive Test Circuit Fig. 14 - Unclamped Inductive Waveforms Fig. 15 - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF Q Q - GS GD + V D.U.T. DS VG VGS - 3 mA Charge I I G D Current sampling resistors
Fig. 16 - Basic Gate Charge Waveform Fig. 17 - Gate Charge Test Circuit
S22-0058-Rev. C, 31-Jan-2022
6
Document Number: 91238 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000