Datasheet IRFP9140 (Vishay) - 4
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 11 / 4 — IRFP9140. Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage. Fig. … |
| Dateiformat / Größe | PDF / 1.0 Mb |
| Dokumentensprache | Englisch |
IRFP9140. Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage. Fig. 7 - Typical Source-Drain Diode Forward Voltage
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IRFP9140
www.vishay.com Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
S22-0058-Rev. C, 31-Jan-2022
4
Document Number: 91238 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
S22-0058-Rev. C, 31-Jan-2022
4
Document Number: 91238 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000