Datasheet UF3SC120040B7S (UnitedSiC) - 8

HerstellerUnitedSiC
Beschreibung1200V-35mW SiC FET
Seiten / Seite10 / 8 — 10,000. 50. 45. Ciss. ). A. 40. ). 1,000. (. pF. I. D. (. 35. t,. C. n. …
Dateiformat / GrößePDF / 438 Kb
DokumentenspracheEnglisch

10,000. 50. 45. Ciss. ). A. 40. ). 1,000. (. pF. I. D. (. 35. t,. C. n. ,. e. e. 30. r. C. r. nc. 100. oss. 25. Cu. ita. n. ac. ai. 20. p. r. D. Ca. 15. 10. C. D. 10. Crss. 5. 1. 0. 0. 200. 400. 600. 800. 1000. 1200. -75. -50. -25. 0. 25

10,000 50 45 Ciss ) A 40 ) 1,000 ( pF I D ( 35 t, C n , e e 30 r C r nc 100 oss 25 Cu ita n ac ai 20 p r D Ca 15 10 C D 10 Crss 5 1 0 0 200 400 600 800 1000 1200 -75 -50 -25 0 25

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10,000 50 45 Ciss ) A 40 ) 1,000 ( pF I D ( 35 t, C n , e e 30 r C r nc 100 oss 25 Cu ita n ac ai 20 p r D Ca 15 10 C D 10 Crss 5 1 0 0 200 400 600 800 1000 1200 -75 -50 -25 0 25 50 75 100 125 150 175 Drain-Source Voltage, VDS (V) Case Temperature, TC (°C) Figure 13. Typical capacitances at f = 100kHz and VGS Figure 14. DC drain current derating = 0V 250 1 ) W( 200 /W C ot °( P t ,n JC 0.1 io 150 Z q , D = 0.5 at e ip nc D = 0.3 ss a i 100 d D = 0.1 D r D = 0.05 e mpe 0.01 I w l o a D = 0.02 P 50 mre D = 0.01 Th Single Pulse 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Case Temperature, TC (°C) Pulse Time, tp (s) Figure 15. Total power dissipation Figure 16. Maximum transient thermal impedance Datasheet: UF3SC120040B7S Rev. A, December 2020 8