Datasheet UF3SC120040B7S (UnitedSiC) - 7

HerstellerUnitedSiC
Beschreibung1200V-35mW SiC FET
Seiten / Seite10 / 7 — 0. 0. Vgs. =. -5V. Vgs. =. -. 5V. -10. -10. Vgs. =. 0V. Vgs. =. 0V. ). …
Dateiformat / GrößePDF / 438 Kb
DokumentenspracheEnglisch

0. 0. Vgs. =. -5V. Vgs. =. -. 5V. -10. -10. Vgs. =. 0V. Vgs. =. 0V. ). A(. A. Vgs. =. 5V. -20. Vgs. =. 5V. (. -20. I. ,. D. Vgs. =. 8V. I. ,. D. Vgs. =. 8V. nte. nt. r. -30. e. r. r. -30. r. Cu. Cu. n. -40. n. ai. -40. r. air. D. D. -50. -50

0 0 Vgs = -5V Vgs = - 5V -10 -10 Vgs = 0V Vgs = 0V ) A( A Vgs = 5V -20 Vgs = 5V ( -20 I , D Vgs = 8V I , D Vgs = 8V nte nt r -30 e r r -30 r Cu Cu n -40 n ai -40 r air D D -50 -50

Modelllinie für dieses Datenblatt

Textversion des Dokuments

0 0 Vgs = -5V Vgs = - 5V -10 -10 Vgs = 0V Vgs = 0V ) A( A Vgs = 5V -20 Vgs = 5V ( -20 I , D Vgs = 8V I , D Vgs = 8V nte nt r -30 e r r -30 r Cu Cu n -40 n ai -40 r air D D -50 -50 -60 -60 -4 -3 -2 -1 0 -4 -3 -2 -1 0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Figure 9. 3rd quadrant characteristics at TJ = -55°C Figure 10. 3rd quadrant characteristics at TJ = 25°C 0 80 70 -10 ) 60 A( -20 I , D 50 J) nt m( e r -30 S r S 40 E O Cu Vgs = - 5V n 30 -40 air Vgs = 0V D 20 Vgs = 5V -50 Vgs = 8V 10 -60 0 -4 -3 -2 -1 0 0 200 400 600 800 1000 1200 Drain-Source Voltage, V Drain-Source Voltage, V DS (V) DS (V) Figure 11. 3rd quadrant characteristics at TJ = 175°C Figure 12. Typical stored energy in COSS at VGS = 0V Datasheet: UF3SC120040B7S Rev. A, December 2020 7