Datasheet UF3SC120040B7S (UnitedSiC) - 9

HerstellerUnitedSiC
Beschreibung1200V-35mW SiC FET
Seiten / Seite10 / 9 — 1200. VDS. =. 800V,. VGS. =. -5V/12V. 100. R. 1000. G_ON. =. 8.5W,. …
Dateiformat / GrößePDF / 438 Kb
DokumentenspracheEnglisch

1200. VDS. =. 800V,. VGS. =. -5V/12V. 100. R. 1000. G_ON. =. 8.5W,. RG_OFF. =. 22W. J). FWD:. same. device. with. V. m. GS. =. 1ms. (. -5V,. RG. =. 22W. ). y. A. gr. 800. (. e. I. D. 10. n. ,. E. nt. g. 600. e. 10ms

1200 VDS = 800V, VGS = -5V/12V 100 R 1000 G_ON = 8.5W, RG_OFF = 22W J) FWD: same device with V m GS = 1ms ( -5V, RG = 22W ) y A gr 800 ( e I D 10 n , E nt g 600 e 10ms

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1200 VDS = 800V, VGS = -5V/12V 100 R 1000 G_ON = 8.5W, RG_OFF = 22W J) FWD: same device with V m GS = 1ms ( -5V, RG = 22W ) y A gr 800 ( e I D 10 n , E nt g 600 e 10ms n rr hi Etot Cu itc Eon 400 n 100ms 1 Sw Eoff airD 1ms DC 200 10ms 0.1 0 1 10 100 1000 0 10 20 30 40 50 Drain-Source Voltage, V Drain Current, I DS (V) D (A) Figure 17. Safe operation area at TC = 25°C, D = 0, Figure 18. Clamped inductive switching energy vs. Parameter t drain current at T p J = 25°C 1000 350 900 300 J) 800 J) m( m( 700 F 250 F E ON , 600 E O y , g y 200 r g e 500 r n e E n 400 E 150 on ff n- 300 V O r DS = 800V, VGS = -5V/12V 100 n-r V Tu I 200 D = 35A, TJ = 25°C DS = 800V, VGS = -5V/12V FWD: same device with V Tu I GS = - 5V, 50 D = 35A, TJ =25°C 100 R FWD: same device with V G = 22W GS = -5V. 0 0 0 5 10 15 20 25 0 20 40 60 80 100 Total External RG, RG,EXT_ON (W) Total External RG, RG,EXT_OFF (W) Figure 19. Clamped inductive switching turn-on Figure 20. Clamped inductive switching turn-off energy vs. RG,EXT_ON energy vs. RG,EXT_OFF Datasheet: UF3SC120040B7S Rev. A, December 2020 9