Datasheet BLF978P (Ampleon) - 6

BLF978P HF / VHF power LDMOS transistor 8. Test information 8.1 Ruggedness in class-AB operation
The BLF978P is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA per section; PL = 1200 W; f = 225 MHz; CW pulsed (tp = 100 s;  = 10 %).
8.2 Impedance information
drain 1 gate 1 Z Z i L gate 2 drain 2 amp01314
Fig 7. Definition of transistor impedance Table 9. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1200 W.
f Zi ZL (MHz) ( ) ( )
225 1.1  j4.4 3.7 + j1.1 BLF978P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 6 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 8. Test information 8.1 Ruggedness in class-AB operation 8.2 Impedance information 8.3 Test circuit 8.4 Graphical data 8.4.1 1-Tone CW pulsed 9. Package outline 10. Handling information 11. Abbreviations 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents