Datasheet BLF978P (Ampleon) - 5

BLF978P HF / VHF power LDMOS transistor 7. Application information
amp01412 amp01413 27 80 27 90 Gp G ηD Gp G ηD (dB) (dB) (dB) (%) (%) (%) (dB) (dB) (dB) (%) (%) (%) 26 70 26 Gp G 70 G 25 p G 60 24 50 25 50 ηD 23 η 40 D 24 30 22 30 21 20 23 10 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 1400 PL (W) PL (W) VDS = 50 V; IDq = 2  5 mA; f = 352 MHz; CW. VDS = 50 V; IDq = 2  50 mA; f = 352 MHz; CW pulsed (tp = 100 s;  = 10 %).
Fig 3. Power gain and drain efficiency on AR191160 Fig 4. Power gain and drain efficiency on AR191160 as function of output power; typical values as function of output power; typical values
amp01414 amp01415 24 80 22 70 Gp G ηD Gp G ηD (dB) (dB) (dB) (%) (%) (%) (dB) (dB) (dB) (%) (%) (%) 23 70 Gp G 21 60 Gp G 22 60 20 50 21 50 ηD 19 η 40 D 20 40 19 30 18 30 0 200 400 600 800 1000 0 200 400 600 800 1000 1200 PL (W) PL (W) VDS = 45 V; IDq = 2  10 mA; f = 500 MHz; CW. VDS = 50 V; IDq = 2  10 mA; f = 650 MHz; CW.
Fig 5. Power gain and drain efficiency on AR191195 Fig 6. Power gain and drain efficiency on AR201049 as function of output power; typical values as function of output power; typical values
BLF978P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 5 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 8. Test information 8.1 Ruggedness in class-AB operation 8.2 Impedance information 8.3 Test circuit 8.4 Graphical data 8.4.1 1-Tone CW pulsed 9. Package outline 10. Handling information 11. Abbreviations 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents