Datasheet Vishay SI7489DP-T1-E3 — Datenblatt

Si7489DP
Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
RDS(on) (Ω) ID (A)a 0.041 at VGS = -10 V -28 0.047 at VGS = -4.5 V -28 VDS (V)
-100 Qg (Typ.)
54 nC • Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET PowerPAK SO-8 S 6.15 mm S 5.15 mm 1 S
2 S
3 G
4 G D
8 D
7 D
6 D
5 Bottom View D Ordering Information: Si7489DP-T1-E3 (Lead (Pb)-free)
Si7489DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage Symbol
VDS
VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C Pulsed Drain Current Limit …