Datasheet SI7489DP (Vishay)

Si7489DP
Vishay Siliconix
P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A)a Qg (Typ.) Available
0.041 at VGS = - 10 V - 28 • TrenchFET® Power MOSFET - 100 54 nC 0.047 at VGS = - 4.5 V - 28
PowerPAK SO-8
S S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D
Ordering Information:
Si7489DP-T1-E3 (Lead (Pb)-free) Si7489DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 100 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 28a T Continuous Drain Current (T C = 70 °C - 24.9a J = 150 °C) ID TA = 25 °C - 7.8b, c TA = 70 °C - 6.2b, c A Pulsed Drain Current IDM - 40 T Continuous Source-Drain Diode Current C = 25 °C I - 28a S TA = 25 °C - 4.3b, c Avalanche Current I L = 0.1 mH AS - 35 Single-Pulse Avalanche Energy EAS 61 mJ TC = 25 °C 83 T Maximum Power Dissipation C = 70 °C 53 PD W TA = 25 °C 5.2b, c TA = 70 °C 3.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 19 24 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.2 1.5 Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. Document Number: 73436 www.vishay.com S09-0271-Rev. C, 16-Feb-09 1