Datasheet JX Semiconductor JX4S0150R330M — Datenblatt

JX4S0150R330M
3300V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gate charge. Consequently, system benefits include
highest efficiency, faster operating frequency, increased power density, reduced EMI, and
reduced system size. Features
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 High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Optimized package with separatedriver source pin
Easy to parallel and simple to drive
ROHS Compliant, Halogen free Application
 EV Charging 
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 Energy Storage
Switch Mode Power Supplies
Pulsed Power
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