Datasheet JX4S0150R330M (JX Semiconductor)
| Hersteller | JX Semiconductor |
| Beschreibung | 3300V SiC N-Channel MOSFET in TO-247 package |
| Seiten / Seite | 7 / 1 — JX4S0150R330M. 3300V N-Channel MOSFET. Description. Features. … |
| Dateiformat / Größe | PDF / 652 Kb |
| Dokumentensprache | Englisch |
JX4S0150R330M. 3300V N-Channel MOSFET. Description. Features. Application. Ordering Information
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JX4S0150R330M 3300V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Optimized package with separatedriver source pin Easy to paral el and simple to drive ROHS Compliant, Halogenfree
Application
EV Charging Energy Storage Switch Mode Power Supplies Pulsed Power Solid State Circuit Breakers Solar String Inverters
Ordering Information
Part Number Marking Package Packaging JX4S0150R330M JX4S0150R330M TO-247 Tube 1 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 175 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics Fig9. 3rd Quadrant Characteristic at 25 oC Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Optimized package with separatedriver source pin Easy to paral el and simple to drive ROHS Compliant, Halogenfree
Application
EV Charging Energy Storage Switch Mode Power Supplies Pulsed Power Solid State Circuit Breakers Solar String Inverters
Ordering Information
Part Number Marking Package Packaging JX4S0150R330M JX4S0150R330M TO-247 Tube 1 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 175 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics Fig9. 3rd Quadrant Characteristic at 25 oC Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance