eGaN® FET DATASHEET EPC2218 EPC2218 – Enhancement Mode Power Transistor
VDS , 100 V
RDS(on) , 3.2 mΩ max
ID , 60 A D
G
HAL S Revised February 20, 2026 Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low
RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and
zero QRR. The end result is a device that can handle tasks where very high switching frequency, and
low on-time are beneficial as well as those where on-state losses dominate.
Application Notes:
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical, OFF = 0 V
(negative voltage not needed)
• Top of FET is electrically connected to source Questions:
Ask a GaN
Expert Die Size: 3.5 x 1.95 mm
EPC2218 eGaN® FETs are supplied only in
passivated die form with solder bars. Maximum Ratings
PARAMETER
VDS
VDS (tr)
ID
VGS
TJ …
