BSS316N OptiMOS™2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS(on),max • Enhancement mode
• Logic level (4.5V rated) 1.4 ID A • Avalanche rated
• Qualified according to AEC Q101
PG-SOT23 • 100%lead-free; RoHS compliant 3 • Halogen-free according to IEC61249-2-21
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2 Type Package Tape and Reel Information Marking Lead Free Packing BSS316N SOT23 H6327: 3000 pcs/ reel SYs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 1.4 T A=70 °C 1.1 Pulsed drain current I D,pulse T A=25 °C 5.6 Avalanche energy, single pulse E AS I D=1.4 A, R GS=25 Ω 3.7 Reverse diode dv /dt dv /dt I D=1.4 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature A mJ kV/µs ±20 V 0.5 W -55 . 150 °C 0 (2|I D|R DS(on)max,
I D=1.1 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
of the PCB. Rev 2.3 page 2 2011-07-06 BSS316N
Parameter Values Symbol Conditions Unit min. typ. max. -71 94 -26 35 Dynamic characteristics
Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss -5 7 Turn-on delay time t d(on) -3.4 -Rise time tr -2.3 -Turn-off delay time t d(off) -5.8 -Fall time tf -1 -Gate to source charge Q gs -0.3 -Gate to drain charge Q gd -0.2 -Gate charge total Qg -0.6 -Gate plateau voltage V plateau -3.4 -V -0.5 A -5.6 -0.8 1.1 V -9.1 -ns -2.6 -nC V GS=0 V, V DS=15 V,
f =1 MHz V DD=15 V, V GS=10 V,
I D=1.4 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=15 V, I D=1.4 A,
V GS=0 to 5 V nC Reverse Diode
Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.3 T A=25 °C
V GS=0 V, I F=1.4 A,
T j=25 °C
V R=10 V, I F=1.4 A,
di F/dt =100 A/µs page 3 2011-07-06 BSS316N
1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 1.6
0.5 1.2 I D [A] P tot [W] 0.375 0.25 0.8 0.4 0.125 0 0 …
