Datasheet VBsemi IRF4435TRPBF-VB — Datenblatt

IRF4435TRPBF-VB
www.VBsemi.com IRF4435TRPBF-VB Datasheet P-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
-30 RDS(on) (Ω) ID (A)d 0.018 at VGS = -10 V -9.0 0.024 at VGS = -4.5 V -7.8 • Halogen-free According to IEC 61249-2-21
Definition Qg (Typ.) • Trench Power MOSFET
• 100 % Rg Tested 13 nC APPLICATIONS
• Load Switch
• Battery Switch
S SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View
P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C Maximum Power Dissipation TC = 25 °C
TA = 25 °C
TC = 25 °C …