Datasheet IRF4435TRPBF-VB (VBsemi)

IRF4435TRPBF-VB
www.VBsemi.com IRF4435TRPBF-VB Datasheet P-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
-30 RDS(on) (Ω) ID (A)d 0.018 at VGS = -10 V -9.0 0.024 at VGS = -4.5 V -7.8 • Halogen-free According to IEC 61249-2-21
Definition Qg (Typ.) • Trench Power MOSFET
• 100 % Rg Tested 13 nC APPLICATIONS
• Load Switch
• Battery Switch
S SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View
P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C Maximum Power Dissipation TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C ID IS -2.1a, b
4.2
2.7 PD 2.5a, b
1.6a, b
-55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit
V -9.0
-7.2
-7.0a, b
-5.6a, b
-30
-3.5 IDM Pulsed Drain Current
Continuous Source-Drain Diode Current Limit
-30
± 20 A W °C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot t ≤ 10 s
Steady State Symbol
RthJA
RthJF Typical
40
24 Maximum
50
30 Unit
°C/W Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 95 °C/W.
d. Based on TC = 25 °C. 服务热线：400-655-8788
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