Datasheet New Jersey Semiconductor 2N4360 — Datenblatt
| Hersteller | New Jersey Semiconductor |
| Serie | 2N4360 |
| Artikelnummer | 2N4360 |
Trans-MOSFET P-CH Si 20 V.
Preise
Parameter
| Category | Power MOSFET |
| Channel Type | P |
| Configuration | Single |
| Material | Si |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -20 V |
| Maximum Power Dissipation | 200 mW |
| Number of Elements per Chip | 1 |
| Operating Temperature Max | 125 °C |
| Operating Temperature Min | -55 °C |
Herstellerklassifikation
- MOSFET