Datasheet Infineon IPD90N04S3H4ATMA1 — Datenblatt

IPD90N04S3-H4 OptiMOSВ®-T Power-Transistor Product Summary
V DS 40 V R DS(on),max 4.3 mΩ ID 90 A Features N-channel -Enhancement mode
PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260В°C peak reflow 175В°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S3-H4 PG-TO252-3-11 QN04H4 Maximum ratings, at T j=25 В°C, unless otherwise specified
Parameter Symbol Continuous drain current1) ID Conditions
T C=25 В°C, V GS=10 V
T C=100 В°C,
V GS=10 V2) Value
90 Unit
A 90 Pulsed drain current2) I D,pulse T C=25 В°C 360 Avalanche energy, single pulse2) E AS I D=45 A 330 mJ Avalanche current, single pulse I AS -90 A Gate source voltage V GS -В±20 V Power dissipation P tot T C=25 В°C 115 W Operating and storage temperature T j, T stg -55 . +175 В°C IEC climatic category; DIN IEC 68-1 -55/175/56 Rev. 1.0 page 1 2008-08-01 IPD90N04S3-H4 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2)
Thermal resistance, junction -case R thJC -1.3 SMD version, device on PCB R thJA minimal footprint -62 6 cm2 cooling area3) -40 K/W Electrical characteristics, at T j=25 В°C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 -Gate threshold voltage V GS(th) V DS=V GS, I D=65 ВµA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V,
T j=25 В°C -1 -100 V DS=40 V, V GS=0 V,
T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V -100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=90 A -3.4 4.3 mΩ Rev. 1.0 page 2 2008-08-01 IPD90N04S3-H4 Parameter Symbol Values Conditions Unit min. typ. max. -3000 3900 -850 1100 Dynamic characteristics2)
Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss -130 200 Turn-on delay time t d(on) -20 -Rise time tr -13 -Turn-off delay time t d(off) -30 -Fall time tf -10 -Gate to source charge Q gs -18 24 Gate to drain charge Q gd -12 18 Gate charge total Qg -46 60 Gate plateau voltage V plateau -5.6 -V -90 A -360 V GS=0 V, V DS=25 V,
f =1 MHz V DD=20 V, V GS=10 V,
I D=90 A, R G=3.5 Ω pF ns Gate Charge Characteristics2) V DD=32 V, I D=90 A,
V GS=0 to 10 V nC Reverse Diode
Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=90 A,
T j=25 В°C -0.95 1.3 V Reverse recovery time2) t rr V R=20 V, I F=I S,
di F/dt =100 A/Вµs -35 -ns Reverse recovery charge2) Q rr -35 -nC T C=25 В°C 1) Current is limited by bondwire; with an R thJC = 1.3K/W the chip is able to carry 122A at 25В°C. …