Datasheet Texas Instruments CSD18536KTT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD18536KTT |
60 V, N-Kanal-NexFET-Leistungs-MOSFET
Datenblätter
CSD18536KTT 60 V N-Channel NexFET Power MOSFET datasheet
PDF, 413 Kb, Datei veröffentlicht: Mar 10, 2016
Auszug aus dem Dokument
Status
| CSD18536KTT | CSD18536KTTT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
Verpackung
| CSD18536KTT | CSD18536KTTT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 3 | 3 |
| Package Type | KTT | KTT |
| Industry STD Term | TO-263 | TO-263 |
| JEDEC Code | R-PSFM-G | R-PSFM-G |
| Package QTY | 500 | 50 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD18536KTT | CSD18536KTT |
| Width (mm) | 8.41 | 8.41 |
| Length (mm) | 10.18 | 10.18 |
| Thickness (mm) | 4.44 | 4.44 |
| Pitch (mm) | 2.54 | 2.54 |
| Max Height (mm) | 4.83 | 4.83 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | CSD18536KTT | CSD18536KTTT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 349 | 349 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | D2PAK | D2PAK |
| QG Typ, nC | 108 | 108 |
| QGD Typ, nC | 14 | 14 |
| RDS(on) Typ at VGS=4.5V, mOhm | 1.7 | 1.7 |
| Rds(on) Max at VGS=10V, mOhms | 1.6 | 1.6 |
| Rds(on) Max at VGS=4.5V, mOhms | 2.2 | 2.2 |
| VDS, V | 60 | 60 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 1.8 | 1.8 |
Öko-Plan
| CSD18536KTT | CSD18536KTTT | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
Modellreihe
Serie: CSD18536KTT (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor