Datasheet Texas Instruments CSD17313Q2 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD17313Q2 |
30V N-Kanal-NexFET - Leistungs-MOSFET
Datenblätter
CSD17313Q2 30-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 406 Kb, Revision: E, Datei veröffentlicht: Sep 30, 2015
Auszug aus dem Dokument
Status
| CSD17313Q2 | CSD17313Q2T | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
Verpackung
| CSD17313Q2 | CSD17313Q2T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 6 | 6 |
| Package Type | DQK | DQK |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 1733 | 1733 |
| Width (mm) | 2 | 2 |
| Length (mm) | 2 | 2 |
| Thickness (mm) | .75 | .75 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | CSD17313Q2 | CSD17313Q2T |
|---|---|---|
| Configuration | Single | Single |
| IDM, Max Pulsed Drain Current(Max), A | 20 | 20 |
| Package, mm | SON2x2 | SON2x2 |
| QG Typ, nC | 2.1 | 2.1 |
| QGD Typ, nC | 0.4 | 0.4 |
| RDS(on) Typ at VGS=4.5V, mOhm | 26 | 26 |
| Rds(on) Max at VGS=4.5V, mOhms | 32 | 32 |
| VDS, V | 30 | 30 |
| VGS, V | 10 | 10 |
| VGSTH Typ, V | 1.3 | 1.3 |
Öko-Plan
| CSD17313Q2 | CSD17313Q2T | |
|---|---|---|
| RoHS | Compliant | Compliant |
Anwendungshinweise
- Power Solution for the IntelВ® Atomв„ў E6X5CPDF, 27 Kb, Datei veröffentlicht: Jun 29, 2011
Power Solution for the IntelВ® Atomв„ў E6x5x - Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD17313Q2 (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor