Datasheet Texas Instruments CSD19536KTT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19536KTT |
| Artikelnummer | CSD19536KTT |
CSD19536KTT 100-V-N-Kanal-NexFET ™ -Leistungs-MOSFET 3-DDPAK / TO-263
Datenblätter
CSD19536KTT 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 915 Kb, Revision: B, Datei veröffentlicht: Aug 16, 2016
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 3 |
| Package Type | KTT |
| Industry STD Term | TO-263 |
| JEDEC Code | R-PSFM-G |
| Package QTY | 500 |
| Carrier | LARGE T&R |
| Device Marking | CSD19536KTT |
| Width (mm) | 8.41 |
| Length (mm) | 10.18 |
| Thickness (mm) | 4.44 |
| Pitch (mm) | 2.54 |
| Max Height (mm) | 4.83 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 272 A |
| ID, package limited | 200 A |
| IDM, Max Pulsed Drain Current(Max) | 400 A |
| Package | D2PAK mm |
| QG Typ | 118 nC |
| QGD Typ | 17 nC |
| Rds(on) Max at VGS=10V | 2.4 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 2.5 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Modellreihe
Serie: CSD19536KTT (2)
- CSD19536KTT CSD19536KTTT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor