Datasheet Texas Instruments CSD19537Q3 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19537Q3 |
| Artikelnummer | CSD19537Q3 |
100 V N-Kanal-NexFET-Leistungs-MOSFET 8-VSON-CLIP -55 bis 150
Datenblätter
CSD19537Q3 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 504 Kb, Revision: A, Datei veröffentlicht: May 31, 2016
Auszug aus dem Dokument
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 8 |
| Package Type | DQG |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | CSD19537 |
| Width (mm) | 3.3 |
| Length (mm) | 3.3 |
| Thickness (mm) | 1 |
| Mechanical Data | Herunterladen |
Parameter
| ID, Silicon limited at Tc=25degC | 53 A |
| IDM, Max Pulsed Drain Current(Max) | 219 A |
| Package | SON3x3 mm |
| QG Typ | 16 nC |
| QGD Typ | 2.9 nC |
| Rds(on) Max at VGS=10V | 14.5 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 3.0 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD19537Q3 (2)
- CSD19537Q3 CSD19537Q3T
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor