Datasheet Texas Instruments CSD19537Q3 — Datenblatt

HerstellerTexas Instruments
SerieCSD19537Q3
Datasheet Texas Instruments CSD19537Q3

100 V N-Kanal-NexFET-Leistungs-MOSFET

Datenblätter

CSD19537Q3 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 504 Kb, Revision: A, Datei veröffentlicht: May 31, 2016
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Preise

Status

CSD19537Q3CSD19537Q3T
Lifecycle StatusActive (Recommended for new designs)Active (Recommended for new designs)
Manufacture's Sample AvailabilityNoYes

Verpackung

CSD19537Q3CSD19537Q3T
N12
Pin88
Package TypeDQGDQG
Package QTY2500250
CarrierLARGE T&RSMALL T&R
Device MarkingCSD19537CSD19537
Width (mm)3.33.3
Length (mm)3.33.3
Thickness (mm)11
Mechanical DataHerunterladenHerunterladen

Parameter

Parameters / ModelsCSD19537Q3
CSD19537Q3
CSD19537Q3T
CSD19537Q3T
ID, Silicon limited at Tc=25degC, A5353
IDM, Max Pulsed Drain Current(Max), A219219
Package, mmSON3x3SON3x3
QG Typ, nC1616
QGD Typ, nC2.92.9
Rds(on) Max at VGS=10V, mOhms14.514.5
VDS, V100100
VGS, V2020
VGSTH Typ, V3.03.0

Öko-Plan

CSD19537Q3CSD19537Q3T
RoHSCompliantCompliant
Pb FreeYesYes

Anwendungshinweise

  • Ringing Reduction Techniques for NexFET High Performance MOSFETs
    PDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011

Modellreihe

Serie: CSD19537Q3 (2)

Herstellerklassifikation

  • Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor