Datasheet Texas Instruments CSD19538Q2 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19538Q2 |
| Artikelnummer | CSD19538Q2 |
100 V, 49 mOhm SON2x2 NexFET-Leistungs-MOSFET 6-WSON -55 bis 150
Datenblätter
CSD19538Q2 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 394 Kb, Revision: A, Datei veröffentlicht: Jan 20, 2017
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 6 |
| Package Type | DQK |
| Package QTY | 3000 |
| Carrier | LARGE T&R |
| Device Marking | 1958 |
| Width (mm) | 2 |
| Length (mm) | 2 |
| Thickness (mm) | .75 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 13.1 A |
| IDM, Max Pulsed Drain Current(Max) | 34.4 A |
| Package | SON2x2 mm |
| QG Typ | 4.3 nC |
| QGD Typ | 0.8 nC |
| Rds(on) Max at VGS=10V | 59 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 3.2 V |
Öko-Plan
| RoHS | Compliant |
Modellreihe
Serie: CSD19538Q2 (2)
- CSD19538Q2 CSD19538Q2T
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor