Datasheet Texas Instruments CSD19538Q2T — Datenblatt

HerstellerTexas Instruments
SerieCSD19538Q2
ArtikelnummerCSD19538Q2T
Datasheet Texas Instruments CSD19538Q2T

100 V, 49 mOhm SON2x2 NexFET-Leistungs-MOSFET 6-WSON -55 bis 150

Datenblätter

CSD19538Q2 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 394 Kb, Revision: A, Datei veröffentlicht: Jan 20, 2017
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Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityNo

Verpackung

Pin6
Package TypeDQK
Package QTY250
CarrierSMALL T&R
Device Marking1958
Width (mm)2
Length (mm)2
Thickness (mm).75
Mechanical DataHerunterladen

Parameter

ConfigurationSingle
ID, Silicon limited at Tc=25degC13.1 A
IDM, Max Pulsed Drain Current(Max)34.4 A
PackageSON2x2 mm
QG Typ4.3 nC
QGD Typ0.8 nC
Rds(on) Max at VGS=10V59 mOhms
VDS100 V
VGS20 V
VGSTH Typ3.2 V

Öko-Plan

RoHSCompliant

Modellreihe

Serie: CSD19538Q2 (2)

Herstellerklassifikation

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor