Datasheet Texas Instruments CSD19533Q5AT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19533Q5A |
| Artikelnummer | CSD19533Q5AT |
100 V, 7,8 mOhm, SON5x6 N-Kanal NexFET ™ Leistungs-MOSFET 8-VSONP
Datenblätter
CSD19533Q5A 100 V N-Channel NexFET Power MOSFET datasheet
PDF, 768 Kb, Revision: A, Datei veröffentlicht: May 23, 2014
Auszug aus dem Dokument
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 8 |
| Package Type | DQJ |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | CSD19533 |
| Width (mm) | 6 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 75 A |
| IDM, Max Pulsed Drain Current(Max) | 231 A |
| Package | SON5x6 mm |
| QG Typ | 27 nC |
| QGD Typ | 4.9 nC |
| Rds(on) Max at VGS=10V | 9.5 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 2.8 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD19533Q5A (2)
- CSD19533Q5A CSD19533Q5AT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor