Datasheet Texas Instruments CSD87312Q3E — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD87312Q3E |
| Artikelnummer | CSD87312Q3E |
Zwei 30-V-N-Kanal-NexFET-Leistungs-MOSFETs 8-VSON -55 bis 150
Datenblätter
Dual 30-V N-Channel NexFet Power MOSFET, CSD87312Q3E datasheet
PDF, 783 Kb, Datei veröffentlicht: Nov 19, 2011
Auszug aus dem Dokument
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 8 |
| Package Type | DPB |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 87312E |
| Width (mm) | 3.3 |
| Length (mm) | 3.3 |
| Thickness (mm) | .9 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Dual Common Source |
| ID, Silicon limited at Tc=25degC | 27 A |
| IDM, Max Pulsed Drain Current(Max) | 45 A |
| Package | SON3x3 mm |
| QG Typ | 6.3 nC |
| QGD Typ | 0.7 nC |
| RDS(on) Typ at VGS=4.5V | 31 mOhm |
| Rds(on) Max at VGS=4.5V | 38 mOhms |
| VDS | 30 V |
| VGS | 10 V |
| VGSTH Typ | 1 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Modellreihe
Serie: CSD87312Q3E (2)
- CSD87312Q3E CSD87312Q3E-ASY
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor