Datasheet Texas Instruments CSD13306W — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD13306W |
| Artikelnummer | CSD13306W |
CSD13306W 12-V-N-Kanal-NexFET ™ -Leistungs-MOSFET 6-DSBGA
Datenblätter
CSD13306W 12 V N Channel NexFET Power MOSFET datasheet
PDF, 611 Kb, Datei veröffentlicht: Mar 16, 2015
Auszug aus dem Dokument
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 6 |
| Package Type | YZC |
| Industry STD Term | DSBGA |
| JEDEC Code | R-XBGA-N |
| Package QTY | 3000 |
| Carrier | LARGE T&R |
| Device Marking | 13306 |
| Width (mm) | 1.8 |
| Length (mm) | 1.5 |
| Thickness (mm) | 2 |
| Pitch (mm) | .5 |
| Max Height (mm) | 1 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| IDM, Max Pulsed Drain Current(Max) | 44 A |
| Package | WLP 1.0x1.5 mm |
| QG Typ | 8.6 nC |
| QGD Typ | 3.0 nC |
| RDS(on) Typ at VGS=4.5V | 8.8 mOhm |
| Rds(on) Max at VGS=4.5V | 10.2 mOhms |
| VDS | 12 V |
| VGS | 10 V |
| VGSTH Typ | 1.0 V |
Öko-Plan
| RoHS | Compliant |
Modellreihe
Serie: CSD13306W (2)
- CSD13306W CSD13306WT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor