Datasheet International Rectifier IRFU7746PbF — Datenblatt

StrongIRFETTM IRFR7746PbF IRFU7746PbF
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters HEXFET® Power MOSFET G S D VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) 75V 9.5m 11.2m 59A 56A D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant G Gate S G D-Pak IRFR7746PbF S D G I-Pak IRFU7746PbF D Drain S Source Base part number IRFR7746PbF IRFU7746PbF Package Type D-Pak I-Pak Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tube 75 Orderable Part Number IRFR7746PbF IRFR7746TRPbF IRFU7746PbF ) RDS(on), Drain-to -Source On Resistance (m 30 ID = 35A 25 60 Limited by package 50
ID, Drain Current (A) 20 40 30 20 10 TJ = 125°C 15 TJ = 25°C 10 5 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2014 International Rectifier Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback August 19, 2014 Absolute Maximum Rating Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (tested) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient (PCB Mount) RJA Junction-to-Ambient RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS IGSS RG Notes: Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C IRFR/U7746PbF
Max. 59 42 56 230* 99 0.66 ± 20 -55 to + 175 300 116 130 See Fig 15, 16, 23a, 23b Typ. ­­­ ­­­ ­­­ Max. 1.52 …