Datasheet JX3S0020120M (JX Semiconductor) - 8
| Hersteller | JX Semiconductor |
| Beschreibung | 1200V, 40 Ohm, Silicon Carbide MOSFET in TO-247-3L package |
| Seiten / Seite | 10 / 8 — JX3S0040R120MC. 最大功耗衰减. 瞬态热阻（结-壳）. Maximum Power Dissipation Derating. … |
| Dateiformat / Größe | PDF / 813 Kb |
| Dokumentensprache | Englisch |
JX3S0040R120MC. 最大功耗衰减. 瞬态热阻（结-壳）. Maximum Power Dissipation Derating. Transient Thermal Impedance (Junction-Case)
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JX3S0040R120MC 最大功耗衰减 瞬态热阻（结-壳） Maximum Power Dissipation Derating Transient Thermal Impedance (Junction-Case) Ptot=f(TC), TJ≤150
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ZthJC=f(tp) 安全工作区 开关能量 Safe Operating Area Switching Energy IDS=f(VDS), TC=25 , D=0, Parameter: tp Switching Loss=f(IDS), TJ=25 , VDD=800V, RG(ext)=2.5Ω, VGS=-5V/+18V, L=150uH
Document Outline 特点 Features
℃
ZthJC=f(tp) 安全工作区 开关能量 Safe Operating Area Switching Energy IDS=f(VDS), TC=25 , D=0, Parameter: tp Switching Loss=f(IDS), TJ=25 , VDD=800V, RG(ext)=2.5Ω, VGS=-5V/+18V, L=150uH
Document Outline 特点 Features