Datasheet JX4S0150R330M (JX Semiconductor) - 7

JX4S0150R330M Package Drawing: Dimensions UNIT mm
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES SYMBDLS MIN NOM MAX MIN NOM MAX A 4.9 5 5.1 0.193 0.197 0.201 A1 2.31 2.42 2.52 0.091 0.095 0.099 A2 1.9 2 2.1 0.075 0.079 0.083 b 1.16 1.22 1.27 0.046 0.048 0.050 b1 1.15 1.2 1.25 0.045 0.047 0.049 b2 2.61 2.76 2.91 0.103 0.109 0.115 b3 1.36 1.42 1.47 0.054 0.056 0.058 C 0.59 0.62 0.66 0.023 0.024 0.026 D 20.9 21 21.1 0.823 0.827 0.831 D1 15.94 16.24 16.54 0.628 0.639 0.651 D2 5 0.197 TYP D3 0.8 0.95 1.1 0.031 0.037 0.043 e 5.08 BSC 0.200 BSC e1 2.54 BSC 0.100BSC E 16.05 16.15 16.25 0.632 0.636 0.640 E1 13.82 14.02 14.26 0.544 0.552 0.561 L 19.75 19.95 20.15 0.778 0.785 0.793 L1 —— —— 3.87 —— —— 0.152 Q 5.95 BSC 0.234BSC ØP 3.45 3.6 3.75 0.136 0.142 0.148 7 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 175 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics Fig9. 3rd Quadrant Characteristic at 25 oC Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance