Datasheet IRFD9020 (Vishay) - 6
| Hersteller | Vishay |
| Beschreibung | P-Channel Power MOSFET |
| Seiten / Seite | 9 / 6 — IRFD9020. Fig. 12c - Maximum Avalanche Energy vs. Drain Current. Fig. 13a … |
| Dateiformat / Größe | PDF / 266 Kb |
| Dokumentensprache | Englisch |
IRFD9020. Fig. 12c - Maximum Avalanche Energy vs. Drain Current. Fig. 13a - Basic Gate Charge Waveform
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRFD9020
www.vishay.com Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF - Q Q GS GD + V D.U.T. DS VG VGS - 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S16-1506-Rev. D, 01-Aug-16
6
Document Number: 90170 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF - Q Q GS GD + V D.U.T. DS VG VGS - 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S16-1506-Rev. D, 01-Aug-16
6
Document Number: 90170 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000